000			02237nam a22003857a 4500
001			7171
003			BD-DhEWU
005			20180103093438.0
008			130905s2010 nyua g b 001 0 eng d
010			_a 2010920631
020			_a9781441915467 (alk. paper)
020			_a144191546X (alk. paper)
020			_a9781441915474 (eISBN)
035			_a(OCoLC) 461276247
040			_aUKM _cUKM _dYDXCP _dC#P _dBWX _dBTCTA _dVRC _dBD-DhEWU _beng
041			_aeng
050	0	0	_aTK7871.95 _b.F86 2010
082	0	4	_a621.3815284 FUN _b2010
245	0	0	_aFundamentals of III-V semiconductor MOSFETs / _cedited by Serge Oktyabrsky, Peide Ye.
260			_aNew York : _bSpringer, _cc2010.
300			_axv, 445 p. : _bill. ; _c24 cm.
500			_aSubjects Metal oxide semiconductor field-effect transistors -- Design and construction. Electronic circuit design.
504			_aIncludes bibliographical references and index.
505			_aTowards III-V digital MOSFET circuits.- Physics of compound semiconductors: band-engineered heterostructures and strain effects.- Physics and modeling of compound semiconductor MOSFETs.- P-channel MOSFETs.- Compound semiconductor technology: MBE and MOCVD.- Properties and trade-offs of compound semiconductor MOSFETs.- Electronic structure and properties of high-k gate oxides.- Interface chemistry of III-V's with oxides.- Heterostructure FETs for digital circuits.- Interface passivation techniques.- Source/drain contact technologies.- MOSFETs with Ga2O3 gate oxide.- MOSFETs with ALD high-k oxides.- Narrow bandgap MOSFETs: InAs and InSb as channel materials.- GaN based MOSFETs.- Electrical measurement issues for gate stacks and FETs.- Circuits with III-V MOSFETs.
526			_aPharmacy
590			_aTahur Ahmed
650		0	_aMetal oxide semiconductor field-effect transistors _xDesign and construction. _2SLSH _92181
650		0	_aElectronic circuit design. _2SLSH _92182
700	1		_aOktyabrsky, Serge. _92183
700	1		_aYe, Peide D. _92184
856			_3OCLC _uhttp://www.worldcat.org/title/fundamentals-of-iii-v-semiconductor-mosfets/oclc/461276247&referer=brief_results
856	4	0	_3Ebook Fulltext _uhttp://lib.ewubd.edu/ebook/7171
942			_2ddc _cTEXT
999			_c7171 _d7171
999			_c7171 _d7171