Strained-Si heterostructure field effect devices / C.K. Maiti, S. Chattopadhyay, L.K. Bera.
Material type:
TextLanguage: English Series: Series in materials science and engineeringPublication details: New York : Taylor & Francis, c2007. Description: 423 p. : ill. ; 25 cmISBN: 9780750309936 (alk. paper); 0750309938 (alk. paper)Other title: Strained silicon heterostructure field effect devicesSubject(s): Metal oxide semiconductor field-effect transistors | Silicon -- Electric propertiesDDC classification: 621.3815284 LOC classification: TK7871.95 | .M27 2007Online resources: Table of contents only | Publisher description | WorldCat details | E-book Fulltext | Item type | Current library | Collection | Call number | Copy number | Status | Date due | Barcode | Item holds |
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Dr. S. R. Lasker Library, EWU E-book | Non-fiction | 621.3815284 MAS 2007 (Browse shelf(Opens below)) | Not for loan | ||||
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Dr. S. R. Lasker Library, EWU Reserve Section | Non-fiction | 621.3815284 MAS 2007 (Browse shelf(Opens below)) | C-1 | Not For Loan | 21174 | ||
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Dr. S. R. Lasker Library, EWU Circulation Section | Non-fiction | 621.3815284 MAS 2007 (Browse shelf(Opens below)) | C-2 | Available | 21175 |
Includes bibliographical references and index.
TOC Introduction --
Strain engineering in microelectronics --
Strain-engineered substrates --
Electronic properties of engineered substrates --
Gate dielectrics on engineered substrates --
Heterostructure SiGe/SiGeC MOSFETs --
Strained-Si Heterostructure MOSFETs --
Modeling and simulation of Hetero-FETs.
Brings together materials science, manufacturing processes, and research and developments of SiGe and strained-Si. This book contains the information on strain engineering in silicon CMOS and strained-Si-based integrated circuit technology and strain-engineered MOSFETs. It presents various aspects of silicon heterostructure materials and devices.
EEE
Sagar Shahanawaz
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