TY  - BOOK
AU  - Oktyabrsky,Serge
AU  - Ye,Peide D.
TI  - Fundamentals of III-V semiconductor MOSFETs
SN  - 9781441915467 (alk. paper)
AV  - TK7871.95 .F86 2010
U1  - 621.3815284 FUN 
PY  - 2010///
CY  - New York
PB  - Springer
KW  - Metal oxide semiconductor field-effect transistors
KW  - Design and construction
KW  - SLSH
KW  - Electronic circuit design
N1  - Subjects	
Metal oxide semiconductor field-effect transistors -- Design and construction.
Electronic circuit design; Includes bibliographical references and index; Towards III-V digital MOSFET circuits.- Physics of compound semiconductors: band-engineered heterostructures and strain effects.- Physics and modeling of compound semiconductor MOSFETs.- P-channel MOSFETs.- Compound semiconductor technology: MBE and MOCVD.- Properties and trade-offs of compound semiconductor MOSFETs.- Electronic structure and properties of high-k gate oxides.- Interface chemistry of III-V's with oxides.- Heterostructure FETs for digital circuits.- Interface passivation techniques.- Source/drain contact technologies.- MOSFETs with Ga2O3 gate oxide.- MOSFETs with ALD high-k oxides.- Narrow bandgap MOSFETs: InAs and InSb as channel materials.- GaN based MOSFETs.- Electrical measurement issues for gate stacks and FETs.- Circuits with III-V MOSFETs; Pharmacy
UR  - http://www.worldcat.org/title/fundamentals-of-iii-v-semiconductor-mosfets/oclc/461276247&referer=brief_results
UR  - http://lib.ewubd.edu/ebook/7171
ER  -