TY  - BOOK
AU  - Grabinski,Władysław
AU  - Nauwelaers,Bart
AU  - Schreurs,Dominique
TI  - Transistor level modeling for analog/RF IC design
SN  - 1402045557 (hd. bd.)
AV  - TK7871.95 .T73 2006
U1  - 621.3815 22
PY  - 2006///
CY  - Dordrecht
PB  - Springer
KW  - Metal oxide semiconductor field-effect transistors
KW  - Integrated circuits
KW  - Metal oxide semiconductors
N1  - Print version:
Transistor level modeling for analog/RF IC design.
Dordrecht : Springer, c2006
(OCoLC)68629648; Includes bibliographical references and index; TOC; Foreword; H.Iwai Introduction; W.Grabinski/ B.Nauwelaers/ D.Schreurs 1. 2/3D process and devices simulation; D.Donoval/ A.Vrbicky/ A.Chvala/P.Beno 2. PSP: An advanced surface-potential-based mosfet model; R.van Langevelde/ G.Gildenblat 3. EKV 3.0 mosfet model; M.Bucher/ A.Bazigos/ F.Drummenacher/ J-M.Sallese/ C.Enz 4. Modeling using high-frequency measurements; D.Schreurs 5. Empirical FET Models; I.Angelov 6. Modeling the SOI MOSFET Nonlinearities; B.Parvais/ A.Siligaris 7. Circuit level RF modeling and design; N.Itoh 8. On incorporating parasitic quantum effects in classical circuits simulations; F.Felgenhauer/ M.Begoin/ W.Mathis 9. Compact modeling of the MOSFET in VHDL-AMS; C.Lallement/ F.Pecheux/ A.Vachoux/ F.Pregaldiny 10. Compact modeling in Verilog-A; B.Troyanovsky/ P.O'Halloran/ M.Mierzwinski Index; EEE
N2  - Summary:
Presents practical knowledge in the field of MOS transistor modeling. This book covers the 2/3D process and device simulations with a focus on high-voltage MOSFET devices, the development of both PSP  Read more

UR  - https://www.worldcat.org/title/transistor-level-modeling-for-analogrf-ic-design/oclc/68629648?referer=di&ht=edition
UR  - http://lib.ewubd.edu/ebook/5920
ER  -