Strained-Si heterostructure field effect devices / C.K. Maiti, S. Chattopadhyay, L.K. Bera.

By: Maiti, C. K Contributor(s): Chattopadhyay, Swapan, 1952- | Bera, L. K Material type: Text

TextLanguage: English Series: Series in materials science and engineeringPublication details: New York : Taylor & Francis, c2007. Description: 423 p. : ill. ; 25 cmISBN: 9780750309936 (alk. paper); 0750309938 (alk. paper)Other title: Strained silicon heterostructure field effect devicesSubject(s): Metal oxide semiconductor field-effect transistors | Silicon -- Electric propertiesDDC classification: 621.3815284 LOC classification: TK7871.95 | .M27 2007Online resources: Table of contents only | Publisher description | WorldCat details | E-book Fulltext

Contents:

TOC Introduction -- Strain engineering in microelectronics -- Strain-engineered substrates -- Electronic properties of engineered substrates -- Gate dielectrics on engineered substrates -- Heterostructure SiGe/SiGeC MOSFETs -- Strained-Si Heterostructure MOSFETs -- Modeling and simulation of Hetero-FETs.

Summary: Brings together materials science, manufacturing processes, and research and developments of SiGe and strained-Si. This book contains the information on strain engineering in silicon CMOS and strained-Si-based integrated circuit technology and strain-engineered MOSFETs. It presents various aspects of silicon heterostructure materials and devices.

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Holdings
Item type	Current library	Collection	Call number	Copy number	Status	Barcode
E-Book	Dr. S. R. Lasker Library, EWU E-book	Non-fiction	621.3815284 MAS 2007 (Browse shelf(Opens below))		Not for loan
Text	Dr. S. R. Lasker Library, EWU Reserve Section	Non-fiction	621.3815284 MAS 2007 (Browse shelf(Opens below))	C-1	Not For Loan	21174
Text	Dr. S. R. Lasker Library, EWU Circulation Section	Non-fiction	621.3815284 MAS 2007 (Browse shelf(Opens below))	C-2	Available	21175

Total holds: 0

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Previous	621.38152 WAC 2013 Computational photonics :	621.381528 LUN 2006 Nanoscale transistors :	621.3815284 FUN 2010 Fundamentals of III-V semiconductor MOSFETs /	621.3815284 MAS 2007 Strained-Si heterostructure field effect devices /	621.381531 BRI 2003 Signal integrity issues and printed circuit board design /	621.381531 BRI 2003 Signal integrity issues and printed circuit board design /	621.381531 KHH 2006 Handbook of analytical instruments	Next

Includes bibliographical references and index.

TOC Introduction --
Strain engineering in microelectronics --
Strain-engineered substrates --
Electronic properties of engineered substrates --
Gate dielectrics on engineered substrates --
Heterostructure SiGe/SiGeC MOSFETs --
Strained-Si Heterostructure MOSFETs --
Modeling and simulation of Hetero-FETs.

Brings together materials science, manufacturing processes, and research and developments of SiGe and strained-Si. This book contains the information on strain engineering in silicon CMOS and strained-Si-based integrated circuit technology and strain-engineered MOSFETs. It presents various aspects of silicon heterostructure materials and devices.

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Sagar Shahanawaz

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